Laser processing method

ABSTRACT

For modulating laser light for forming a modified region SD 3  at an intermediate position between a position closer to a rear face  21  and a position closer to a front face  3  with respect to an object  1,  a quality pattern J having a first brightness region extending in a direction substantially orthogonal to a line  5  and second brightness regions located on both sides of the first brightness region in the extending direction of the line  5  is used. After forming modified regions SD 1,  SD 2  at positions closer to the rear face  21  but before forming modified regions SD 4,  SD 5  at positions closer to the rear face  21  while using the front face  3  as a laser light entrance surface, the modified region SD 3  is formed at the intermediate position by irradiation with laser light modulated according to a modulation pattern including the quality pattern J.

TECHNICAL FIELD

The present invention relates to a laser processing method for forming amodified region in an object to be processed.

BACKGROUND ART

Known as a conventional laser processing method in the technical fieldmentioned above is one which irradiates a planar object to be processedwith laser light having a wavelength of 1300 nm, so as to form amodified region to become a starting point region for cutting in theobject along a line to cut the object (see, for example, PatentLiterature 1).

CITATION LIST Patent Literature

Patent Literature 1: Japanese Patent Application Laid-Open No.2006-108459

SUMMARY OF INVENTION Technical Problem

Here, when the object is a silicon substrate, for example, it exhibits ahigher transmittance for the laser light having a wavelength of 1300 nmthan for laser light having a wavelength of 1064 nm, whereby a modifiedregion which is easy to generate fractures can be formed by using thelaser light having a wavelength of 1300 nm even at a position locateddeep from the laser entrance surface of the object. This can reduce thenumber of rows of modified regions when cutting the object by forming aplurality of rows of modified regions in the thickness direction of theobject along a line to cut, thereby shortening takt time.

While the use of the laser light having a wavelength of 1300 nm can formmodified regions which are easy to generate fractures, the fractures maycontinuously advance in the thickness direction of the object whenforming a plurality of rows of modified regions in the thicknessdirection of the object, so as to meander on a main face of the objectand so forth, thereby lowering the accuracy in cutting the object.

It is therefore an object of the present invention to provide a laserprocessing method which can reduce the number of rows of modifiedregions formed in the thickness direction of the object while preventingthe accuracy in cutting the object from lowering.

Solution to Problem

For achieving the above-mentioned object, the laser processing method inaccordance with the present invention is a laser processing method ofirradiating a planar object to be processed with laser light so as toform a modified region to become a starting point region for cutting inthe object along a line to cut the object; wherein, when relativelymoving a converging point of the laser light along the line while usingone main face of the object as a laser light entrance surface, so as toform modified regions at a position closer to the other main face of theobject, a position closer to the one main face, and an intermediateposition between the position closer to the other main face and theposition closer to the one main face, for forming the modified region atthe intermediate position after forming the modified region at theposition closer to the other main face but before forming the modifiedregion at the position closer to the one main face, the laser light ismodulated by a spatial light modulator according to a modulation patternincluding a quality pattern having a first brightness region extendingin a direction intersecting the line and second brightness regionsadjacent to both sides of the first brightness region in an extendingdirection of the line.

After forming the modified region at the position closer to the othermain face but before forming the modified region at the position closerto the one main face, this laser processing method forms the modifiedregion at the intermediate position between the position closer to theother main face and the position closer to the one main face byirradiation with the laser light modulated by the spatial lightmodulator according to the modulation pattern including the qualitypattern mentioned above. Even when laser light having a wavelengthlonger than 1064 nm is used in order to reduce the number of rows ofmodified regions, for example, thus forming the modified region at theintermediate position can prevent fractures from continuously advancingin the thickness direction of the object at the time of forming aplurality of rows of modified regions in the thickness direction of theobject. When a stress is generated in the object, for example, afracture occurring from the modified region acting as a start pointextends in the thickness direction of the object more easily than in thecase where no modified region is formed at the intermediate position,whereby the object can be cut accurately along the line. Hence, thislaser processing method can reduce the number of rows of modifiedregions formed in the thickness direction of the object along the line,while preventing the accuracy in cutting the object from lowering.

By forming a modified region at a position closer to the other main faceis meant that the modified region is formed such that the centerposition of the modified region is shifted from the center position ofthe object to the other main face, whereas by forming a modified regionat a position closer to the one main face is meant that the modifiedregion is formed such that the center position of the modified region isshifted from the center position of the object to the one main face. Byforming a modified region at an intermediate position between theposition closer to the other main face and the position closer to theone main face is meant that the modified region is formed between themodified region formed at the position closer to the other main face andthe modified region formed at the position closer to the one main face(i.e., it does not mean that the modified region is formed such that itscenter position coincides with the center position of the object in thethickness direction of the object).

Here, in the extending direction of the line, the width of the firstbrightness region is preferably at a ratio of 20% to 50% of the width ofan effective region for modulating the laser light in the modulationpattern. In this case, a modified region which can reliably preventfractures from continuously advancing in the thickness direction of theobject when forming a plurality of rows of modified regions in thethickness direction of the object can be formed at the intermediateposition.

In the extending direction of the line, the width of the firstbrightness region may be narrower or wider than the width of each of thesecond brightness regions. In either case, a modified region which canreliably prevent fractures from continuously advancing in the thicknessdirection of the object when forming a plurality of rows of modifiedregions in the thickness direction of the object can be formed at theintermediate position.

Preferably, the modulation pattern includes the quality pattern, anindividual difference correction pattern for correcting an individualdifference occurring in a laser processing device, and a sphericalaberration correction pattern for correcting a spherical aberrationoccurring according to a material of the object and a distance from thelaser light entrance surface of the object to the converging point whenforming the modified region at the intermediate position, and the laserlight is modulated by a spatial light modulator according to amodulation pattern including the individual difference correctionpattern and spherical aberration correction pattern when forming themodified regions at the position closer to the other main face and theposition closer to the one main face. In this case, the modified regionsformed at the intermediate position and the positions closer to theother main face and the one main face are easier to generate fractures,whereby the number of rows of modified regions formed in the thicknessdirection of the object along the line can be reduced more reliably.

Preferably, the laser light has a wavelength of 1080 nm or longer. Thismakes the object exhibit a higher transmittance for the laser light, sothat the modified regions formed at the intermediate position, theposition closer to the other main face, and the position closer to theone main face are easier to generate fractures, whereby the number ofrows of modified regions formed in the thickness direction of the objectalong the line can be reduced more reliably.

Cutting the object along the line from the above-mentioned modifiedregions acting as a start point can accurately cut the object along theline. Manufacturing a semiconductor device by cutting the object canyield a highly reliable semiconductor device.

Advantageous Effects of Invention

The present invention can reduce the number of rows of modified regionsformed in the thickness direction of the object while preventing theaccuracy in cutting the object from lowering.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a structural diagram of a laser processing device used forforming a modified region;

FIG. 2 is a plan view of an object to be processed in which the modifiedregion is to be formed;

FIG. 3 is a sectional view of the object taken along the line III-III ofFIG. 2;

FIG. 4 is a plan view of the object after forming the modified region;

FIG. 5 is a sectional view of the object taken along the line V-V ofFIG. 4;

FIG. 6 is a sectional view of the object taken along the line VI-VI ofFIG. 4;

FIG. 7 is a plan view of the object in an embodiment of the laserprocessing method in accordance with the present invention;

FIG. 8 is a structural diagram of the laser processing device in theembodiment of the laser processing method in accordance with the presentinvention;

FIG. 9 is a partial sectional view of a reflective spatial lightmodulator in FIG. 8;

FIG. 10 is a structural view of a laser processing system equipped withthe laser processing device of FIG. 8;

FIG. 11 is a diagram illustrating a quality pattern used in the laserprocessing system of FIG. 10;

FIG. 12 is a flowchart illustrating an example of laser processingmethods performed in the laser processing system of FIG. 10;

FIG. 13 is a flowchart illustrating another example of laser processingmethods performed in the laser processing system of FIG. 10;

FIG. 14 is a first diagram illustrating a cut section obtained whencutting the object from modified regions acting as a start point;

FIG. 15 is a second diagram illustrating a cut section obtained whencutting the object from modified regions acting as a start point;

FIG. 16 is a third diagram illustrating a cut section obtained whencutting the object from modified regions acting as a start point;

FIG. 17 is a fourth diagram illustrating a cut section obtained whencutting the object from modified regions acting as a start point;

FIG. 18 is a fifth diagram illustrating a cut section obtained whencutting the object from modified regions acting as a start point;

FIG. 19 is a schematic view of converging spots of laser light forforming a modified region; and

FIG. 20 is a sixth diagram illustrating a cut section obtained whencutting the object from modified regions acting as a start point.

DESCRIPTION OF EMBODIMENTS

In the following, preferred embodiments of the present invention will beexplained in detail with reference to the drawings. In the drawings, thesame or equivalent constituents will be referred to with the same signswhile omitting their overlapping descriptions.

Before explaining an embodiment of the laser processing method inaccordance with the present invention, forming of a modified region foran object to be processed will be described with reference to FIGS. 1 to6, As illustrated in FIG. 1, a laser processing device 100 comprises alaser light source 101 which causes laser light L to oscillate in apulsating manner, a dichroic mirror 103 arranged such as to change thedirection of the optical axis (optical path) of the laser light L by90°, and a condenser lens 105 for converging the laser light L. Thelaser processing device 100 also comprises a support table 107 forsupporting an object to be processed 1 irradiated with the laser light Lconverged by the condenser lens 105, a stage 111 for moving the supporttable 107, a laser light source controller 102 for controlling the laserlight source 101 in order to regulate the output, pulse width, and thelike of the laser light L, and a stage controller 115 for controllingthe movement of the stage 111.

In the laser processing device 100, the laser light L emitted from thelaser light source 101 changes the direction of its optical axis by 90°with the dichroic mirror 103 and then is converged by the condenser lens105 into the object 1 mounted on the support table 107. At the sametime, the stage 111 is shifted, so that the object 1 moves relative tothe laser light L along a line to cut 5. This forms a modified region inthe object 1 along the line 5.

A semiconductor material, a piezoelectric material, or the like is usedas a material for the object 1, while the line 5 for cutting the object1 is set therefor as illustrated in FIG. 2. Here, the line 5 is avirtual line extending straight. When forming a modified region withinthe object 1, the laser light L is relatively moved along the line 5(i.e., in the direction of arrow A in FIG. 2) while locating aconverging point (converging position) P within the object 1 asillustrated in FIG. 3. This forms a modified region 7 within the object1 along the line 5 as illustrated in FIGS. 4 to 6, whereby the modifiedregion 7 formed along the line 5 becomes a cutting start region 8.

The converging point P is a position at which the laser light L isconverged. The line 5 may be curved instead of being straight or a lineactually drawn on a front face 3 of the object 1 without beingrestricted to the virtual line. The modified region 7 may be formedeither continuously or intermittently. The modified region 7 may beformed like lines or dots; it will be sufficient if the modified region7 is formed at least within the object 1. There are cases wherefractures are formed from the modified region 7 acting as a start point,and the fractures and modified region 7 may be exposed at outer surfaces(the front face, rear face, and outer peripheral face) of the object 1.

Here, the laser light L is absorbed in particular in the vicinity of theconverging point within the object 1 while being transmittedtherethrough, whereby the modified region 7 is formed in the object 1(i.e., internal absorption type laser processing). Hence, the front face3 of the object 1 hardly absorbs the laser light L and thus does notmelt. In the case of forming a removing part such as a hole or groove bymelting it away from the front face 3 (surface absorption type laserprocessing), the processing region gradually progresses from the frontface 3 side to the rear face side in general.

By the modified region are meant regions whose physical characteristicssuch as density, refractive index, and mechanical strength have attainedstates different from those of their surroundings. Examples of themodified region include molten processed regions, crack regions,dielectric breakdown regions, refractive index changed regions, andtheir mixed regions. Further examples of the modified region 7 includean area where the density has changed from that of an unmodified regionin a material of the object and an area formed with a lattice defect(which may collectively be referred to as a high-density transitionalregion).

The molten processed regions, refractive index changed regions, areaswhere the modified region has a density different from that of theunmodified region, or areas formed with a lattice defect may furtherincorporate a fracture (microcrack) therewithin or at an interfacebetween the modified region and an unmodified region. The incorporatedfracture may be formed over the whole surface of the modified region orin only a part or a plurality of parts thereof. Examples of the object 1include those containing or constituted by silicon, glass, LiTaO₃, andsapphire (Al₂O₃).

Here, a plurality of modified spots (processing scars) are formed alongthe line 5, so as to produce the modified region 7. The modified spots,each of which is a modified part formed by a shot of one pulse of pulsedlaser light (i.e., one pulse of laser irradiation: laser shot), gatherto form the modified region 7. Examples of the modified spots includecrack spots, molten processed spots, refractive index changed spots, andthose mixed with at least one of them. As for the modified spots, itwill be preferred if their size and the length of fractures generatedthereby are controlled as appropriate in view of required accuracy incutting, required flatness in the cut section, thickness, kind, andcrystal orientation of the object, and the like.

An embodiment of the laser processing method in accordance with thepresent invention will now be explained. FIG. 7 is a plan view of theobject in an embodiment of the laser processing method in accordancewith the present invention. As illustrated in FIG. 7, the object 1having a planar form comprises a silicon substrate 11 and a functionaldevice layer 16 formed on a front face 11 a of the silicon substrate 11.

The functional device layer 16 includes a plurality of functionaldevices 15 formed into a matrix in directions parallel and perpendicularto an orientation flat 6 of the silicon substrate Examples of thefunctional devices 15 include semiconductor operating layers formed bycrystal growth, light-receiving devices such as photodiodes,light-emitting devices such as laser diodes, and circuit devices formedas circuits.

The lines 5 are formed like grids in the object 1 so as to pass betweenthe functional devices 15, 15 adjacent to each other. The object 1 iscut along the lines 5 into chips, each of which becomes a semiconductordevice having one functional device 15.

FIG. 8 is a structural diagram illustrating a laser processing device inone embodiment of the laser processing method in accordance with thepresent invention. As illustrated in FIG. 8, this laser processingdevice 300 comprises a laser light source 202, a reflective spatiallight modulator 203, a 4 f optical system 241, and a condensing opticalsystem 204. The reflective spatial light modulator 203, 4 f opticalsystem 241, and condensing optical system 204 are accommodated in ahousing 234, while the laser light source 202 is held in a housing 231containing the housing 234.

The laser light source 202, for which a fiber laser is used, forexample, emits laser light L which is pulsed laser light having awavelength of 1080 nm or longer, for example. Here, the laser lightsource 202 is secured to a top plate 236 of the housing 234 with screwsor the like so as to emit the laser light L horizontally.

The reflective spatial light modulator 203, for which a spatial lightmodulator (SLM) made of a liquid crystal on silicon (LCOS) is used, forexample, modulates the laser light L emitted from the laser light source202. Here, the reflective spatial light modulator 203 modulates thelaser light L horizontally incident thereon, while reflecting itobliquely upward with respect to the horizontal direction.

FIG. 9 is a partial sectional view of the reflective spatial lightmodulator in the laser processing device of FIG. 8. As illustrated inFIG. 9, the reflective spatial light modulator 203 comprises a siliconsubstrate 213, a drive circuit layer 914, a plurality of pixelelectrodes 214, a reflecting film 215 such as a dielectric multilayermirror, an alignment film 999 a, a liquid crystal layer 216, analignment film 999 b, a transparent conductive film 217, and atransparent substrate 218 such as a glass substrate, which are stackedin this order.

The transparent substrate 218 has a front face 218 a extending along anXY plane, while the front face 218 a constitutes a front face of thereflective spatial light modulator 203. The transparent substrate 218 ismainly composed of a light-transmitting material such as glass, forexample, and transmits therethrough the laser light L having apredetermined wavelength incident thereon from the front face 218 a ofthe reflective spatial light modulator 203 to the inside of the latter.The transparent conductive film 217 is formed on a rear face 218 b ofthe transparent substrate 218 and mainly composed of a conductivematerial (e.g., ITO) which transmits therethrough the laser light L.

The plurality of pixel electrodes 214 are arranged two-dimensionallyaccording to the arrangement of a plurality of pixels on the siliconsubstrate 213 along the transparent conductive film 217. Each pixelelectrode 214 is made of a metal material such as aluminum, for example,while its front face 214 a is processed flat and smooth. The pluralityof pixel electrodes 214 are driven by an active matrix circuit providedwith the drive circuit layer 914.

The active matrix circuit is disposed between the plurality of pixelelectrodes 214 and the silicon substrate 213 and controls the voltageapplied to the pixel electrodes 214 according to a light image to beissued from the reflective spatial light modulator 203. An example ofsuch an active matrix circuit has a first driver circuit for controllingpixel rows each aligning in the X direction and a second driver circuitfor controlling pixel columns each aligning in the Y direction, whichare not depicted, and is constructed such that a controller 250 appliesa predetermined voltage to the pixel electrode 214 of a pixel designatedby both of the driver circuits.

The alignment films 999 a, 999 b are arranged on both end faces of theliquid crystal layer 216, respectively, so as to align a group of liquidcrystal molecules in a fixed direction. As the alignment films 999 a,999 b, those made of a polymer material such as polyimide, whosesurfaces coming into contact with the liquid crystal layer 216 have beensubjected to rubbing, for example, are employed.

The liquid crystal layer 216 is arranged between the plurality of pixelelectrodes 214 and the transparent conductive film 217 and modulates thelaser light L according to an electric field formed between each pixelelectrode 214 and the transparent conductive film 217. That is, when theactive matrix circuit applies a voltage to a given pixel electrode 214,an electric field is formed between the transparent conductive film 217and this pixel electrode 214.

The electric field is applied to the reflecting film 215 and the liquidcrystal layer 216 at a ratio of their respective thicknesses. Thealignment direction of liquid crystal molecules 216 a changes accordingto the magnitude of the electric field applied to the liquid crystallayer 216. The laser light L entering the liquid crystal layer 216through the transparent substrate 218 and transparent conductive film217, if any, is modulated by the liquid crystal molecules 216 a whilepassing through the liquid crystal layer 216, then reflected by thereflecting film 215, and thereafter modulated again by the liquidcrystal layer 216 before being taken out.

This adjusts the wavefront of the laser light L incident on andtransmitted through a modulation pattern (image for modulation), so thatindividual rays constituting the laser light L vary in phases ofcomponents in a predetermined direction orthogonal to their advancingdirection.

Returning to FIG. 8, the 4 f optical system 241 adjusts the wavefrontform of the laser light L modulated by the reflective spatial lightmodulator 203. The 4 f optical system 241 has first and second lenses241 a, 241 b.

The lenses 241 a, 242 b are arranged between the reflective spatiallight modulator 203 and the condensing optical system 204 such that thedistance (optical path length) between the reflective spatial lightmodulator 203 and the first lens 241 a equals the focal length f1 of thefirst lens 241 a, the distance (optical path length) between thecondensing optical system 204 and the second lens 241 b equals the focallength f2 of the lens 241 b, the distance (optical path length) betweenthe first and second lenses 241 a, 241 b equals f1+f2, and the first andsecond lenses 241 a, 241 b constitute a double-telecentric opticalsystem. This 4 f optical system 241 can inhibit the laser light Lmodulated by the reflective spatial light modulator 203 from changingits wavefront form through spatial propagation and thereby increasingaberration.

The condensing optical system 204 converges the laser light L modulatedby the 4 f optical system 241 into the object 1. The condensing opticalsystem 204, which includes a plurality of lenses, is placed on a bottomplate 233 of the housing 231 while interposing therebetween a drive unit232 composed of a piezoelectric device and the like.

The laser processing apparatus 300 also comprises a surface observationunit 211 for observing the front face 3 of the object 1 and an AF(AutoFocus) unit 212 for finely adjusting the distance between thecondensing optical system 204 and the object 1, which are accommodatedin the housing 231.

The surface observation unit 211 has an observation light source 211 afor emitting visible light VL1 and a detector 211 b for receiving anddetecting reflected light VL2 of the visible light VL1 reflected by thefront face 3 of the object 1. In the surface observation unit 211, thevisible light VL1 emitted from the observation light source 211 a isreflected by a mirror 208 and dichroic mirrors 209, 210 and transmittedthrough a dichroic mirror 238, so as to be converged by the condensingoptical system 204 to the object. The reflected light VL2 reflected bythe front face 3 of the object 1 is converged by the condensing opticalsystem 204, so as to be transmitted through and reflected by thedichroic mirrors 238, 210, respectively, and then transmitted throughthe dichroic mirror 209, so as to be received by the detector 211 b.

The AF unit 212 emits AF laser light LB1 and receives and detectsreflected light LB2 of the AF laser light LB1 reflected by the frontface 3 of the object 1, thereby acquiring displacement data of the frontface 3 (position (height) data of the front face 3 in the thicknessdirection of the object 1) along the line 5. Then, when forming themodified region 7, the AF unit 212 drives the drive unit 232 accordingto thus obtained displacement data, so as to move the condensing opticalsystem 204 to and fro in its optical axis along undulations of the frontface 3 of the object 1.

The laser processing apparatus 300 further comprises the controller 250,constituted by CPU, ROM, RAM, and the like, for controlling the laserprocessing apparatus 300. The controller 250 controls the laser lightsource 202, so as to adjust the output, pulse width, and the like of thelaser light L emitted from the laser light source 202. When forming themodified region 7, the controller 250 controls the positions of thehousing 231 and stage 111 and the driving of the drive unit 232 so thata simultaneous converging position of the laser light L relatively movesalong the line 5 while being located at a predetermined distance fromthe front face 3 of the object 1.

When forming the modified region 7, the controller 250 also applies apredetermined voltage between each pixel electrode 214 and thetransparent conductive film 217, so as to cause the liquid crystal layer216 to display a predetermined modulation pattern. This allows thereflective spatial light modulator 203 to modulate the laser light Ldesirably.

A case where the object 1 is processed by the above-mentioned laserprocessing apparatus 300 will now be explained. Here, a case where theplanar object 1 is irradiated with the laser light L while locating theconverging point P within the object 1 so as to form the modified region7 to become a starting point region for cutting along the line 5 will beexplained by way of example.

First, an expandable tape is attached to a rear face 21 of the object 1,and the object 1 is mounted on the stage 111. Subsequently, whileirradiating the object 1 with the laser light L in a pulsating mannerfrom the front face 3 employed as the laser light irradiation surface,the object 1 is moved relative to (scanned with) the laser light L alongthe line 5, so as to form the modified region 7.

That is, in the laser processing device 300, the laser light L emittedfrom the laser light source 202 advances horizontally within the housing231 and then is reflected downward by a mirror 205 a, whereby its lightintensity is adjusted by an attenuator 207. Thereafter, the laser lightL is horizontally reflected by a mirror 205 b and, with its intensitydistribution homogenized by a beam homogenizer 260, enters thereflective spatial light modulator 203.

The laser light L incident on the reflective spatial light modulator 203is transmitted through and modulated according to the modulation patterndisplayed on the liquid crystal layer 216 and then is emitted obliquelyupward with respect to the horizontal direction. Subsequently, the laserlight L is reflected upward by a mirror 206 a and then, after itspolarization direction is changed by a half-wave plate 228 so as toorient along the line 5, horizontally by a mirror 206 b, so as to enterthe 4 f optical system 241.

Subsequently, the wavefront form of the laser light L is adjusted sothat it enters the condensing optical system 204 as parallel light.Specifically, the laser light L is transmitted through and converged bythe first lens 241 a and then reflected downward by a mirror 219, so asto diverge through a confocal point O. The diverged laser light L istransmitted through the second lens 241 b, so as to be converged againto become parallel light.

The laser light L passes through the dichroic mirrors 210, 238 insequence, so as to enter the condensing optical system 204, therebybeing converged into the object 1 mounted on the stage 111. As a result,a modified spot is formed at a predetermined depth in the thicknessdirection within the object 1.

Then, the converging point P of the laser light L is relatively movedalong the line 5, so that the modified region 7 is formed by a pluralityof modified spots. Thereafter, the expandable tape is expanded, so as tocut the object 1 along the line 5 from the modified region 7 acting as astarting point region for cutting, whereby a plurality of cut chips areobtained as semiconductor devices (e.g., memories, ICs, light-emittingdevices, and light-receiving devices).

A laser processing system 400 equipped with the above-mentioned laserprocessing device 300 will now be explained. As illustrated in FIG. 10,the laser processing system 400 comprises personal computers(hereinafter referred to as “PCs”) 401, 402, a controller 403, and thelaser processing device 300. As mentioned above, the laser processingdevice 300 irradiates the object 1 with the laser light L modulated bythe reflective spatial light modulator 203, so as to form the modifiedregion 7 in the object 1.

A storage unit (a memory, a hard disk, or the like) 401 a of the PC 401stores conditions for forming the modified region 7 for the object 1 asa database. When a user inputs a desirable forming condition byoperating the PC 401, this forming condition is fed into the controller403 through a LAN (Local Area Network).

When fed with a condition for forming the modified region 7 for theobject 1, the controller (pattern assignment means) 403 chooses one or aplurality of element patterns for the modified region according to theforming condition and assigns the chosen element patterns to the PC 402through the LAN. Here, the element patterns are patterns to becomeelements for a modulation pattern for subjecting the laser light to apredetermined modulation in the reflective spatial light modulator 203in the laser processing device 300, while a plurality of kinds ofelement patterns are stored as a database in a storage unit (a memory, ahard disk, or the like) 402 a of the PC 402.

The storage unit (pattern storage means) 402 a stores an individualdifference correction pattern (D-01) for correcting an individualdifference occurring in the laser processing device 300 (e.g., adistortion occurring in the liquid crystal layer 216 in the reflectivespatial light modulator 203) as an element pattern. The storage unit 402a also stores spherical aberration correction patterns (S-0001 toS-1000) for correcting the spherical aberration occurring at theconverging point P of the laser light L as element patterns. Since thespherical aberration occurring at the converging point P of the laserlight L varies depending on materials of the object 1 and the distancefrom the laser light entrance surface of the object 1 to the convergingpoint P of the laser light L, the spherical aberration correctionpatterns are set with the material and distance serving as parametersand stored in the storage unit 402 a.

The storage unit 402 a further stores quality patterns (J-01 to J-10) aselement patterns. As illustrated in FIG. 11, each quality pattern has afirst brightness region R1 extending in a direction substantiallyorthogonal to the line 5 and second brightness regions R2 located onboth sides of the first brightness region R1 in the extending directionof the line 5.

In the case where the modified regions 7 are formed at a position closerto the rear face 21 of the object 1, a position closer to the front face3 of the object 1, and an intermediate position between the positioncloser to the rear face 21 and the position closer to the front face 3in the order of the position closer to the rear face 21, theintermediate position, and the position closer to the front face 3 (orin the order of the position closer to the front face 3, theintermediate position, and the position closer to the rear face 21), thequality pattern is used when forming the modified region 7 at theintermediate position. That is, the quality pattern is used when formingthe modified region 7 at the intermediate position after forming themodified region at the position closer to the rear face 21 but beforeforming the modified region at the position closer to the front face 3(or after forming the modified region at the position closer to thefront face 3 but before forming the modified region at the positioncloser to the rear face 21).

Returning to FIG. 10, the PC (pattern creation means) 402 reads one or aplurality of kinds of element patterns for the modified region 7 fromthe storage unit 402 a according to the assignment of element patternsby the controller 403. That is, according to the condition for formingthe modified region 7 for the object 1, the PC 402 acquires one or aplurality of kinds of element patterns for the modified region 7 fromthe storage unit 402 a.

When one kind of element pattern is acquired, the PC 402 employs the onekind of element pattern as a modulation pattern for forming the modifiedregion 7 corresponding thereto. When a plurality of kinds of elementpatterns are acquired, the PC 402 employs a composite pattern combiningthe plurality of element patterns as the modulation pattern for formingthe modified region 7 corresponding thereto. After thus creating themodulation pattern, the PC 402 outputs the modulation pattern inassociation with the modified region 7 to the laser processing device300 through a DVI (Digital Visual Interface).

When forming a plurality of kinds of modified regions 7 in the object 1(e.g., when a plurality of rows of modified regions 7 juxtaposed in thethickness direction of the object 1 are formed with respect to one lineto cut 5), the PC 402 creates a modulation pattern for each of all thekinds of modified regions 7 and then outputs the modulation pattern inassociation with its corresponding modified region 7 to the laserprocessing device 300.

The above-mentioned quality pattern will now be explained in moredetail. As illustrated in FIG. 11, in the extending direction of theline 5, the width of first brightness region R1 is at a ratio of 20% to50% of the width of an effective region R for modulating the laser lightL in the modulation pattern. However, in the extending direction of theline 5, the width of the first brightness region R1 may be narrower thanthe width of each of the second brightness regions R2 (see, for example,J-01 in FIG. 10) or wider than the latter (see, for example, J-10 inFIG. 10). The effective region R of the quality pattern is a regioncorresponding to the part of laser light L incident on the condensingoptical system 204 (the part incident on the entrance pupil of thecondensing optical system 204).

Any of the average brightness of the first brightness region R1 and thatof the second brightness regions R2 may be higher than the other as longas they differ from each other. From the viewpoint of increasing thedifference in brightness between the first and second brightnessregions, however, it will be preferred if the average brightness of thefirst brightness region R1 and that of the second brightness region R2deviate from each other by 128 gradations when the brightness of eachpixel constituting the quality pattern is expressed by 256 gradations.

An example of laser processing methods performed in the above-mentionedlaser processing system 400 will now be explained with reference to FIG.12. First, a user operates the PC 401, so as to input a condition forforming the modified region 7 for the object 1 (step S01). Here, thethickness and material of the object 1 are set to 200 μm and silicon,respectively. Two rows of modified regions SD1, SD2 are set as aplurality of rows of modified regions 7 formed in juxtaposition in thethickness direction of the object 1 with respect to one line to cut 5.For forming the modified region SD1, the distance (depth) from the laserlight entrance surface of the object 1 to the converging point P of thelaser light L and the output of the laser light L are set to 180 μm and0.6 W, respectively. For forming the modified region SD2, the distanceand output are set to 70 μm and 0.6 W, respectively.

When the condition for forming the modified region 7 for the object 1 isfed into the controller 403, the latter chooses one or a plurality ofelement patterns for each of the modified regions SD1, SD2 according tothe forming condition and assigns the element patterns in associationwith their corresponding modified regions SD1, SD2 to the PC 402 (stepS02). This allows the PC 402 to acquire appropriate element patternseasily and reliably.

When the element patterns are assigned for each of the modified regionsSD1, SD2, the PC 402 chooses the element patterns in association withtheir corresponding modified regions SD1, SD2 from the storage unit 402a (step S03). Here, the individual difference correction pattern D-01and spherical aberration correction pattern S-0025 are chosen as elementpatterns in association with the modified region SD2, while theindividual difference correction pattern D-01 and spherical aberrationcorrection pattern S-0060 are chosen as element patterns in associationwith the modified region SD1.

Subsequently, for forming the modified regions SD1, SD2, the PC 402combines a plurality of kinds of element patterns in association witheach of the modified regions SD1, SD2 corresponding thereto and employsthe resulting composite pattern as a modulation pattern (step S04).Here, the individual difference correction pattern D-01 and sphericalaberration correction pattern S-0025 are combined so as to create amodulation pattern SD-002 for forming the modified region SD2, while theindividual difference correction pattern D-01 and spherical aberrationcorrection pattern S-0060 are combined so as to create a modulationpattern SD-001 for forming the modified region SD1.

Next, the PC 402 outputs thus created modulation patterns SD-001, SD-002in association with their corresponding modified regions SD1, SD2 to thelaser processing device 300 (step S05). When fed with the modulationpatterns SD-001, SD-002 in association with their corresponding modifiedregions SD1, SD2, the laser processing device 300 performs laserprocessing (step S06).

More specifically in the laser processing device 300, when forming themodified region SD1, the modulation pattern SD-001 is displayed on theliquid crystal layer 216 of the reflective spatial light modulator 203through the controller 250, whereby the laser light L is modulated bythe modulation pattern SD-001. When forming the modified region SD2, themodulation pattern SD-002 is displayed on the liquid crystal layer 216of the reflective spatial light modulator 203 through the controller250, whereby the laser light L is modulated by the modulation patternSD-002.

Since the modulation pattern thus includes the individual differencecorrection pattern and spherical aberration correction pattern whenforming each of the modified regions SD1, SD2, states of forming themodified regions can be inhibited from fluctuating because of theindividual difference occurring in the laser processing device 300 andthe spherical aberration generated at the converging point P of thelaser light L. Here, it is preferable to form the modified region SD2located closer to the laser light entrance surface of the object 1 afterforming the modified region SD1 located farther from the laser lightentrance surface of the object 1.

Another example of laser processing methods performed in theabove-mentioned laser processing system 400 will now be explained withreference to FIG. 13. First, the user operates the PC 401, so as toinput a condition for forming the modified region 7 for the object 1(step S11). Here, the thickness and material of the object 1 are set to300 μm and silicon, respectively. Three rows of modified regions SD1,SD2, SD3 are set as a plurality of rows of modified regions 7 formed injuxtaposition in the thickness direction of the object 1 with respect toone line to cut 5. For forming the modified region SD1, the distance(depth) from the laser light entrance surface of the object 1 to theconverging point P of the laser light L and the output of the laserlight L are set to 260 μm and 0.6 W, respectively. For forming themodified region SD2, the distance and output are set to 180 μm and 0.6W, respectively. For forming the modified region SD3, the distance andoutput are set to 70 μm and 0.6 W, respectively. Here, the qualitypattern is set to “yes” for forming the modified region SD2.

When the condition for forming the modified region 7 for the object 1 isfed into the controller 403, the latter chooses one or a plurality ofelement patterns for each of the modified regions SD1, SD2, SD3according to the forming condition and assigns the element patterns inassociation with their corresponding modified regions SD1, SD2, SD3 tothe PC 402 (step S12). This allows the PC 402 to acquire appropriateelement patterns easily and reliably.

When the element patterns are assigned for each of the modified regionsSD1, SD2, SD3, the PC 402 chooses the element patterns in associationwith their corresponding modified regions SD1, SD2, SD3 from the storageunit 402 a (step S13). Here, the individual difference correctionpattern D-01 and spherical aberration correction pattern S-0025 arechosen as element patterns in association with the modified region SD3.The individual difference correction pattern D-01, spherical aberrationcorrection pattern S-0060, and quality pattern J-03 are chosen aselement patterns in association with the modified region SD2. Theindividual difference correction pattern D-01 and spherical aberrationcorrection pattern S-0100 are chosen as element patterns in associationwith the modified region SD1.

Subsequently, for forming the modified regions SD1, SD2, SD3, the PC 402combines a plurality of kinds of element patterns in association witheach of the modified regions SD1, SD2, SD3 corresponding thereto andemploys the resulting composite pattern as a modulation pattern (stepS14). Here, the individual difference correction pattern D-01 andspherical aberration correction pattern S-0025 are combined so as tocreate a modulation pattern SD-003 for forming the modified region SD3.The individual difference correction pattern D-01, spherical aberrationcorrection pattern S-0060, and quality pattern J-03 are combined so asto create a modulation pattern SD-002 for forming the modified regionSD2. The individual difference correction pattern D-01 and sphericalaberration correction pattern S-0100 are combined so as to create amodulation pattern SD-001 for forming the modified region SD1.

Next, the PC 402 outputs thus created modulation patterns SD-001,SD-002, SD-003 in association with their corresponding modified regionsSD1, SD2, SD3 to the laser processing device 300 (step S15). When fedwith the modulation patterns SD-001, SD-002, SD-003 in association withtheir corresponding modified regions SD1, SD2, SD3, the laser processingdevice 300 performs laser processing (step S16).

More specifically in the laser processing device 300, when forming themodified region SD1, the modulation pattern SD-001 is displayed on theliquid crystal layer 216 of the reflective spatial light modulator 203through the controller 250, whereby the laser light L is modulated bythe modulation pattern SD-001. When forming the modified region SD2, themodulation pattern SD-002 is displayed on the liquid crystal layer 216of the reflective spatial light modulator 203 through the controller250, whereby the laser light L is modulated by the modulation patternSD-002. When forming the modified region SD3, the modulation patternSD-003 is displayed on the liquid crystal layer 216 of the reflectivespatial light modulator 203 through the controller 250, whereby thelaser light L is modulated by the modulation pattern SD-003.

Since the modulation pattern thus includes the individual differencecorrection pattern and spherical aberration correction pattern whenforming each of the modified regions SD1, SD2, SD3, states of formingthe modified regions can be inhibited from fluctuating because of theindividual difference occurring in the laser processing device 300 andthe spherical aberration generated at the converging point P of thelaser light L. Here, it is preferable to form the modified region SD1farther from the laser light entrance surface of the object 1, themodified region SD2 located in the middle, and the modified region SD3located closer to the laser light entrance surface of the object 1 inthis order.

In the case where the modified regions SD1, SD2, SD3 are formed in thisorder, the modulation pattern includes the quality pattern in additionto the individual difference correction pattern and spherical aberrationcorrection pattern when forming the modified region SD2 at theintermediate position. Thus modulating the laser light L by using thequality pattern so as to form the modified region SD2 at theintermediate position can prevent fractures from continuously advancingin the thickness direction of the object 1 when forming the modifiedregions SD1, SD2, SD3 in the thickness direction of the object 1. When astress is generated in the object 1, fractures generated from themodified region acting as a start point extend in the thicknessdirection of the object 1 more easily than in the case where themodified region SD2 is not formed at the intermediate position, wherebythe object 1 can be cut accurately along the line 5. The modified regionSD3 located closer to the laser light entrance surface of the object 1,the modified region SD2 located in the middle, and the modified regionSD1 located farther from the laser light entrance surface of the object1 may also be formed sequentially in this order.

The modulation patterns (individual correction pattern, sphericalaberration correction pattern, and quality pattern) will now beexplained. FIG. 14 is a first diagram illustrating a cut sectionobtained when cutting the object from modified regions acting as a startpoint. Here, using the front face 3 of the object 1 made of siliconhaving a thickness of 625 μm as a laser light entrance surface, modifiedregions SD1 to SD7 were formed in the descending order of their distancefrom the front face 3. For forming the modified regions SD1 to SD7, aspherical aberration correction pattern which could correct thespherical aberration at the converging point P of the laser light L whenforming the modified region SD7 located closest to the front face 3serving as the laser light entrance surface was used, and the laserlight L was modulated by a modulation pattern including the sphericalaberration correction pattern in addition to an individual differencecorrection pattern. As a result, it has been seen as indicated by arrowson the right side of FIG. 14 that fractures generated at the time offorming each of the modified regions SD1 to SD7, the modified regionsSD1 to SD5 in particular, are hard to extend in the thickness directionof the object 1.

FIG. 15 is a second diagram illustrating a cut section obtained whencutting the object from modified regions acting as a start point. Here,using the front face 3 of the object 1 made of silicon having athickness of 625 μm as a laser light entrance surface, modified regionsSD1 to SD7 were formed in the descending order of their distance fromthe front face 3. For forming the modified regions SD1 to SD7, aspherical aberration correction pattern which could correct thespherical aberration at the converging point P of the laser light L whenforming the modified region SD7 located closest to the front face 3serving as the laser light entrance surface was used, and the laserlight L was modulated by a modulation pattern including the sphericalaberration correction pattern in addition to an individual differencecorrection pattern. As a result, it has been seen as indicated by arrowson the right side of FIG. 15 that fractures generated at the time offorming each of the modified regions SD1 to SD7, the modified regionsSD3 to SD5 in particular, are hard to extend in the thickness directionof the object 1.

In view of the results of FIGS. 14 and 15, spherical aberrationcorrection patterns which could correct the spherical aberration at theconverging point P of the laser light L when forming the respectivemodified regions were used (i.e., the spherical aberration correctionpattern was changed depending on the modified regions). FIG. 16 is athird diagram illustrating a cut section obtained when cutting theobject from modified regions acting as a start point. Here, using thefront face 3 of the object 1 made of silicon having a thickness of 400μm as a laser light entrance surface, modified regions SD1 to SD4 wereformed in the descending order of their distance from the front face 3.For forming the modified regions SD1 to SD4, respective sphericalaberration correction patterns which could correct the sphericalaberration at the converging point P of the laser light L were used, andthe laser light L was modulated by modulation patterns including therespective spherical aberration correction patterns in addition to theindividual difference correction pattern. As a result, it has been seenas indicated by arrows on the right side of FIG. 16 that fracturesgenerated at the time of forming the modified regions SD1 to SD4 haveequal lengths among the modified regions SD1 to SD4 and extend in thethickness direction of the object 1 more easily than in the cases ofFIGS. 14 and 15. However, there was a case where the following problemoccurred in a part of a cut section.

FIG. 17 is a fourth diagram illustrating a cut section obtained whencutting the object from modified regions acting as a start point. Whilethe modified regions SD1 to SD4 were formed under a forming conditionequal to that in the case of FIG. 16, fractures continuously advanced inthe thickness direction of the object 1 in the process of forming themodified regions SD1 to SD4 in sequence as indicated by the arrow on theright side of FIG. 17. As a result, twist hackles T occurred at the cutsection of the object 1 and so forth, whereby the cut section meanderedon the front face 3 side in particular.

Therefore, a quality pattern was used in addition to the individualdifference correction pattern and spherical aberration correctionpattern when forming the modified region at the intermediate position.FIG. 18 is a fifth diagram illustrating a cut section obtained whencutting the object from modified regions acting as a start point. Here,using the front face 3 of the object 1 made of silicon having athickness of 400 μm as a laser light entrance surface, modified regionsSD1 to SD5 were formed in the descending order of their distance fromthe front face 3. For forming the modified regions SD1, SD2 locatedcloser to the rear face 21 and the modified regions SD4, SD5 locatedcloser to the front face 3, respective spherical aberration correctionpatterns S which could correct the spherical aberration at theconverging point P of the laser light L were used, and the laser light Lwas modulated by modulation patterns including the respective sphericalaberration correction patterns S in addition to the individualdifference correction pattern D. For forming the modified region SD3 atthe intermediate position between the respective positions closer to therear face 21 and front face 3, the laser light L was modulated by amodulation pattern including a quality pattern J in addition to theindividual difference correction pattern D and spherical aberrationcorrection pattern S.

As a result, fractures generated at the time of forming the modifiedregions SD1, SD2 reached the rear face 21 of the object 1 but failed tojoin with fractures generated at the time of forming the modified regionSD3. Fractures generated at the time of forming the modified regionsSD4, SD5 reached the front face 3 of the object 1 but failed to joinwith the fractures generated at the time of forming the modified regionSD3. This has made it possible to reduce the number of rows of modifiedregions 7 formed in the thickness direction of the object 1 along theline 5, while preventing the accuracy in cutting the object 1 fromlowering.

FIG. 19 is a schematic view of converging spots of laser light forforming a modified region. When the laser light L was modulated by amodulation pattern including an individual difference correction patternand a spherical aberration correction pattern, a converging spot CS1 ofthe laser light L became a circular region as illustrated in FIG. 19(a). When the laser light L was modulated by a modulation patternincluding a quality pattern in addition to the individual differencecorrection pattern and spherical aberration correction pattern, on theother hand, a converging spot CS2 of the laser light L attained a formin which a plurality of dot-like regions were juxtaposed along theextending direction A of the line 5 (i.e. the relative moving directionof the laser light L) as illustrated in FIG. 19( b). There were caseswhere the dot-like regions adjacent to each other partly overlapped andwere spaced apart from each other.

This seems to be because of the fact that the laser light L isdiffracted in the reflective spatial light modulator 203 by the qualitypattern having the first brightness region R1 extending in a directionsubstantially orthogonal to the line 5 and the second brightness regionsR2 located on both sides of the first brightness region R1 in theextending direction of the line S. Irradiation with the laser light Lhaving thus constructed converging spot CS2 can form modified regions 7which can prevent fractures from continuously advancing in the thicknessdirection of the object 1 when forming a plurality of rows of modifiedregions 7 in the thickness direction of the object 1.

As explained in the foregoing, the laser processing method performed inthe laser processing system 400 uses the quality pattern having thefirst brightness region R1 extending in a direction substantiallyorthogonal to the line 5 and the second regions R2 located on both sidesof the first brightness region R1 in the extending direction of the line5 for modulating the laser light L for forming the modified region 7 atthe intermediate position between the position closer to the rear face21 and the position closer to the front face 3 with respect to theobject 1. That is, after forming the modified region 7 at the positioncloser to the rear face 21 but before forming the modified region 7 atthe position closer to the front face 3 while using the front face 3 asthe laser light entrance surface (or after forming the modified region 7at the position closer to the front face 3 but before forming themodified region 7 at the position closer to the rear face 21 while usingthe rear face 21 as the laser light entrance surface), the modifiedregion 7 is formed at the intermediate position by irradiation with thelaser light L modulated by the reflective spatial light modulator 203according to the modulation pattern including the quality pattern. Evenwhen the laser light L having a wavelength longer than 1064 nm is usedin order to reduce the number of rows of modified regions 7, forexample, thus forming the modified region 7 at the intermediate positioncan prevent fractures from continuously advancing in the thicknessdirection of the object 1 at the time of forming a plurality of rows ofmodified regions 7 in the thickness direction of the object 1. When astress is generated in the object 1, for example, a fracture occurringfrom the modified region 7 acting as a start point extends in thethickness direction of the object 1 more easily than in the case wherethe modified region 7 is not formed at the intermediate position,whereby the object 1 can be cut accurately along the line 5. Hence, thislaser processing method can reduce the number of rows of modifiedregions 7 formed in the thickness direction of the object 1 along theline 5, while preventing the accuracy in cutting the object 1 fromlowering, thereby shortening the takt time.

Here, in the extending direction of the line 5, the width of the firstbrightness region R1 is preferably at a ratio of 20% to 50% of the widthof the effective region R for modulating the laser light L in themodulation pattern. In this case, the modified region 7 that canreliably prevent fractures from continuously advancing in the thicknessdirection of the object 1 when forming a plurality of rows of modifiedregions 7 in the thickness direction of the object 1 can be formed atthe intermediate position. In the extending direction of the line 5, thewidth of the first brightness region R1 may be narrower or wider thanthe width of each of the second brightness regions R2.

Preferably, the laser light L is modulated by the reflective spatiallight modulator 203 according to a modulation pattern including aquality pattern, an individual difference correction pattern, and aspherical aberration correction pattern when forming the modified region7 at the intermediate position and according to a modulation patternincluding the individual difference correction pattern and sphericalaberration correction pattern when forming the modified regions 7 at thepositions closer to the rear face 21 and the front face 3. In this case,the modified regions 7 formed at the intermediate position and thepositions closer to the rear face 21 and the front face 3 are easier togenerate fractures, whereby the number of rows of modified regions 7formed in the thickness direction of the object 1 along the line 5 canbe reduced more reliably.

Preferably, the laser light L has a wavelength of 1080 nm or longer.This makes the object 1 exhibit a higher transmittance for the laserlight L, so that the modified regions 7 formed at the intermediateposition and the positions closer to the rear face 21 and the front face3 are easier to generate fractures, whereby the number of rows ofmodified regions 7 formed in the thickness direction of the object 1along the line 5 can be reduced more reliably.

Cutting the object 1 along the line 5 from the above-mentioned modifiedregions 7 acting as a start point can accurately cut the object 1 alongthe line 5. Manufacturing a semiconductor device by cutting the object 1can yield a highly reliable semiconductor device.

Though preferred embodiments of the present invention have beenexplained in the foregoing, the present invention is not limitedthereto.

For example, as illustrated in FIG. 20, the number of rows of modifiedregions 7 formed at positions closer to the rear face 21, the number ofrows of modified regions 7 formed at positions closer to the front face3, and the number of rows of modified regions 7 formed at intermediatepositions can be varied according to the thickness and material of theobject 1. The number of rows of modified regions 7 formed at positionscloser to the rear face 21 can be determined such that fractures can begenerated from the modified regions 7 to the rear face 21, while thenumber of rows of modified regions 7 formed at positions closer to thefront face 3 can be determined such that fractures can be generated fromthe modified regions 7 to the front face 3. The number of rows ofmodified regions 7 formed at intermediate positions can be determinedsuch that fractures can be prevented from advancing continuously in thethickness direction of the object 1 when forming a plurality of rows ofmodified regions 7 in the thickness direction of the object 1.

Not only the quality pattern, individual difference correction pattern,and spherical aberration correction pattern, an astigmatism correctionpattern for correcting the astigmatism at the converging point P of thelaser light L and the like may also be used as element patterns tobecome elements of a modulation pattern.

The reflective spatial light modulator is not limited to the LCOS-SLM,but may also be a MEMS-SLM, a DMD (deformable mirror device), or thelike. The spatial light modulator is not limited to the reflective one,but may be a transmissive one. Examples of the spatial light modulatorinclude those of liquid crystal cell and LCD types. The reflectivespatial light modulator 203 may use the reflection of pixel electrodesof the silicon substrate instead of the dielectric multilayer mirror.

INDUSTRIAL APPLICABILITY

The present invention can reduce the number of rows of modified regionsformed in the thickness direction of the object while preventing theaccuracy in cutting the object from lowering.

REFERENCE SIGNS LIST

1 . . . object to be processed; 3 . . . front face; 5 . . . line to cut;7 . . . modified region; 21 . . . rear face; 203 . . . reflectivespatial light modulator; R1 . . . first brightness region; R2 . . .second brightness region; L . . . laser light; P . . . converging point

1. A laser processing method of irradiating a planar object to beprocessed with laser light so as to form a modified region to become astarting point region for cutting in the object along a line to cut theobject; wherein, when relatively moving a converging point of the laserlight along the line while using one main face of the object as a laserlight entrance surface, so as to form modified regions at a positioncloser to the other main face of the object, a position closer to theone main face, and an intermediate position between the position closerto the other main face and the position closer to the one main face, forforming the modified region at the intermediate position after formingthe modified region at the position closer to the other main face butbefore forming the modified region at the position closer to the onemain face, the laser light is modulated by a spatial light modulatoraccording to a modulation pattern including a quality pattern having afirst brightness region extending in a direction intersecting the lineand second brightness regions adjacent to both sides of the firstbrightness region in an extending direction of the line.
 2. A laserprocessing method according to claim 1, wherein, in the extendingdirection of the line, the width of the first brightness region is at aratio of 20% to 50% of the width of an effective region for modulatingthe laser light in the modulation pattern.
 3. A laser processing methodaccording to claim 2, wherein, in the extending direction of the line,the width of the first brightness region is narrower than the width ofeach of the second brightness regions.
 4. A laser processing methodaccording to claim 2, wherein, in the extending direction of the line,the width of the first brightness region is wider than the width of eachof the second brightness regions.
 5. A laser processing method accordingto claim 1, wherein the modulation pattern includes the quality pattern,an individual difference correction pattern for correcting an individualdifference occurring in a laser processing device, and a sphericalaberration correction pattern for correcting a spherical aberrationoccurring according to a material of the object and a distance from thelaser light entrance surface of the object to the converging point whenforming the modified region at the intermediate position; and whereinthe laser light is modulated by a spatial light modulator according to amodulation pattern including the individual difference correctionpattern and spherical aberration correction pattern when forming themodified regions at the position closer to the other main face and theposition closer to the one main face.
 6. A laser processing methodaccording to claim 1, wherein the laser light has a wavelength of 1080nm or longer.
 7. A laser processing method according to claim 1, whereinthe object is cut along the line from the modified region acting as astart point.
 8. A laser processing method according to claim 7, whereina semiconductor device is manufactured by cutting the object.
 9. A laserprocessing method according to claim 1, wherein, when forming themodified region at the intermediate position, the laser light has aconverging spot shaped by a plurality of dot-like regions juxtaposedalong the extending direction of the line.